AdvatechUK

Advatech offers the first commercially available SiC APD (Avalanche Photodiode), aimed at providing high performance photon detection in the deep UV and covering the UVA, UVB and UVC bands. Operation is possible in both Linear and Geiger modes.


Applications include:



Device performance characteristics being as detailed below.






Characteristic/Parameter

Units

Value

 Sensor Optical Diameter: 

µm

120

 Spectral Performance:                                                              Peak

nm

270

Range

nm

200 to 360

 Package


 TO-46

 Linear Mode Operation



 Operating Voltage

V

<170

 Quantum Efficiency (QE):      

%

35

 Responsivity (Gain - Unity):

A/W

0.1

 Temperature Coefficient of Vb:

V/ºC

0.034

 Dark Current:


 0.1nA

 Geiger Operation



 Breakdown Voltage, Vb - (Typical):      

V

170

 Operating Voltage, Vop      

V

 Vb + 2

 Temperature Coefficient, V/ºC


0.034

 Dark Count Rate (DCR):

kHz

10 (@Vop)

 Photon Detection Efficiency (PDE):

%

10 (@Vop)

 Silicon Carbide Avalanche Photodiode (SiC APD)


 SiC APD Performance Characteristics (SIC-APD-01)


SiC APD - Silicon Carbide APD

 Further Reading / Publications (Click for links)


SiC APDs and Arrays for UV and Solar Blind Detection

SiC Photomultipliers and Avalanche Photodiode Arrays for Ultraviolet and Solar-blind Light Detection

UV SiC avalanche photodetectors for photon counting